A Cross-Coupled E-Band VCO with on-chip SIW Resonator in 130nm SiGe BiCMOS

Abstract

We investigate the use of an SIW cavity on-chip with varactor tuning as a resonant tank for a cross-coupled VCO in 130nm SiGe BiCMOS. Unloaded Q-factors of 31.7 to 214 over the tuning range are obtained. The VCO's frequency tuning range is simulated to be 81.4 – 82.2 GHz, with an average phase noise of −79 dBc/Hz at 1 MHz offset. It is found that the long feed lines to the cavity negate the possible improvement in phase noise gained from the high $\mathbf{Q}_{0}$ cavity.