{"title":"Transient analysis of gate inside junctionless transistor (GI-JLT)","authors":"Pankaj Kumar, P. Kondekar, Sangeeta Singh","doi":"10.1145/2591513.2591557","DOIUrl":null,"url":null,"abstract":"In this letter, the transient performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate its delay and power dissipation performance. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.","PeriodicalId":272619,"journal":{"name":"ACM Great Lakes Symposium on VLSI","volume":"288 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ACM Great Lakes Symposium on VLSI","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1145/2591513.2591557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this letter, the transient performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate its delay and power dissipation performance. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.
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