{"title":"The influence of temperature on the tolerances of MOS-transistors in a 1 µm technology","authors":"D. Takács, U. Schwabe, U. Burker","doi":"10.1109/IEDM.1980.189896","DOIUrl":null,"url":null,"abstract":"In a 1 µm Si-gate technology, channel length and temperature have a strong impact on the electrical device parameters. Experimental data on the influence of the channel length and the temperature on threshold voltage, breakdown voltage and subthreshold currents are presented for different channel dopings and S/D junction depths. The results are discussed with regard to the electrical device tolerances and to limitations in standard Si-gate technologies.","PeriodicalId":180541,"journal":{"name":"1980 International Electron Devices Meeting","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1980 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.1980.189896","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In a 1 µm Si-gate technology, channel length and temperature have a strong impact on the electrical device parameters. Experimental data on the influence of the channel length and the temperature on threshold voltage, breakdown voltage and subthreshold currents are presented for different channel dopings and S/D junction depths. The results are discussed with regard to the electrical device tolerances and to limitations in standard Si-gate technologies.
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