{"title":"An experimental study on conducted noise emission for PMSM drive with SiC inverter: Conducted noise reduction by snubber circuit","authors":"Tomohiro Ozaki, T. Funaki, T. Ibuchi","doi":"10.1109/EMCT.2017.8090353","DOIUrl":null,"url":null,"abstract":"Silicon carbide (SiC) devices are attracting attention as next generation power device because of their high breakdown voltage, low conduction loss, and fast switching speed compared with conventional Silicon (Si) device. SiC power device is expected to be used in electric vehicle and hybrid electric vehicle. The large di/dt and dv/dt in fast switching operation interact with parasitic component in circuit wiring, and causes conducted noise. This study focuses on the switching behavior of SiC MOSFET and the conducted noise characteristics in a inverter. The effect of snubber circuit is evaluated with its combination of installation for SiC module.","PeriodicalId":104929,"journal":{"name":"2017 IV International Electromagnetic Compatibility Conference (EMC Turkiye)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2017-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2017 IV International Electromagnetic Compatibility Conference (EMC Turkiye)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EMCT.2017.8090353","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Silicon carbide (SiC) devices are attracting attention as next generation power device because of their high breakdown voltage, low conduction loss, and fast switching speed compared with conventional Silicon (Si) device. SiC power device is expected to be used in electric vehicle and hybrid electric vehicle. The large di/dt and dv/dt in fast switching operation interact with parasitic component in circuit wiring, and causes conducted noise. This study focuses on the switching behavior of SiC MOSFET and the conducted noise characteristics in a inverter. The effect of snubber circuit is evaluated with its combination of installation for SiC module.
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