Metrology at the leading edge

A. Diebold
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Abstract

The challenges facing characterization and metrology of future semiconductor technology is described in the 2005 ITRS Metrology Roadmap. These challenges are driven by the technologies for future device structures that include molecular electronics, spintronics, nanotube and nanowire based electronics, and other futuristic concepts. Although the challenges are separated into the pre and post 32 nm frac12 pitch nodes, these challenges represent the issues facing the extension of CMOS for another 15 years. Additional challenges are described in a section covering measurement needs for technology beyond CMOS. In this presentation, a brief overview of measurement issues will be described for both CMOS extension and beyond CMOS electronics.
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计量学处于领先地位
在2005年ITRS计量路线图中描述了未来半导体技术表征和计量所面临的挑战。这些挑战是由未来器件结构的技术驱动的,包括分子电子学、自旋电子学、基于纳米管和纳米线的电子学以及其他未来概念。尽管这些挑战被分为32纳米前和32纳米后节点,但这些挑战代表了CMOS在未来15年扩展所面临的问题。在涵盖CMOS以外技术的测量需求的一节中描述了其他挑战。在本报告中,将简要概述CMOS扩展和超越CMOS电子器件的测量问题。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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