Study of properties and preparation conditions of plasmochemical SiO2 films

Abstract

The results of research of properties and preparation conditions of the plasmochemical SiO2 films are submitted. These films coated various substrates (glass, metals, NaCl). Film deposition was carried out by decomposition of the tetraethoxycilane vapor by the electrical discharge with the frequency of about 18 kHz. The excessive products of decomposition were pumped out with maintenance of the tetraethoxycilane vapor and argon pressure of about 0.2 Torr. The study of element structure has shown that the film represents SixOy with x ≈ 1 and y ≈ 2 and contains an impurity of organic inclusions. Density and index of refraction of a coating are close to these parameters for glass SiO2. The form of the film surface is investigated depending on the coating conditions. Infrared spectra of absorption and Raman spectra are investigated. The results of attempts of the iodine in this film as an impurity are given. This method is applied for preparing of the covering with uniform thickness on glass microspheres used as targets in laser fusion experiments on the installation "Iskra-5."