A. Marzaki, V. Bidal, R. Laffont, W. Rahajandraibe, J. Portal, R. Bouchakour
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Abstract
In this paper, a comparison between the DCG-FGT (Dual-Control-Gate Floating-Gate Transistor) and its equivalent circuit composed of standard components is proposed. We demonstrate the DCG-FGT advantages with measurement and simulations under electrical simulator (ELDO). It is not easily to reproduce the DCG-FGT operating mode with standard MOS technology.
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