M. V. van Schie, M. van der Heijden, M. Acar, A. de Graauw, L. D. de Vreede
{"title":"Analysis and design of a wideband high efficiency CMOS outphasing amplifier","authors":"M. V. van Schie, M. van der Heijden, M. Acar, A. de Graauw, L. D. de Vreede","doi":"10.1109/RFIC.2010.5477315","DOIUrl":null,"url":null,"abstract":"This work presents the analysis and design of a novel transformer-based power combining network for an efficient outphasing power amplifier (PA). The proposed power combining network was implemented on PCB together with two 65nm CMOS class-E PA's. Measurements show a peak output power of more than 30dBm over a 29% bandwidth around 700MHz. The peak output power at 700MHz equals 33.9dBm. The 10dB back-off efficiency is larger than 27.3% over the same 29% bandwidth. The 6dB back-off efficiency is larger than 46.4% over this bandwidth. The drain efficiency at 650MHz is larger than 50% over a 10dB power back-off range, which is, to our best knowledge, the highest back-off efficiency reported in a CMOS outphasing PA to date.","PeriodicalId":269027,"journal":{"name":"2010 IEEE Radio Frequency Integrated Circuits Symposium","volume":"33 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-05-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"22","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE Radio Frequency Integrated Circuits Symposium","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIC.2010.5477315","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 22
Abstract
This work presents the analysis and design of a novel transformer-based power combining network for an efficient outphasing power amplifier (PA). The proposed power combining network was implemented on PCB together with two 65nm CMOS class-E PA's. Measurements show a peak output power of more than 30dBm over a 29% bandwidth around 700MHz. The peak output power at 700MHz equals 33.9dBm. The 10dB back-off efficiency is larger than 27.3% over the same 29% bandwidth. The 6dB back-off efficiency is larger than 46.4% over this bandwidth. The drain efficiency at 650MHz is larger than 50% over a 10dB power back-off range, which is, to our best knowledge, the highest back-off efficiency reported in a CMOS outphasing PA to date.
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