{"title":"A novel high frequency, high-efficiency, differential class-E power amplifier in 0.18 /spl mu/m CMOS","authors":"P. Heydari, Ying Zhang","doi":"10.1109/LPE.2003.1231951","DOIUrl":null,"url":null,"abstract":"This paper presents the design of a high efficiency, low THD, 5.7 GHz fully differential power amplifier for wireless communications in a standard 0.18 /spl mu/m CMOS technology. The power amplifier employs a fully differential class-E topology to achieve high power efficiency by exploiting its soft-switching property. In order to achieve high operating frequency, an injection-locked oscillator is utilized, which makes the output voltage of the power amplifier tuned at the input signal frequency. A complementary CMOS cross-coupled pair topology is employed to realize the LC-tank oscillator because it has lower phase-noise, thereby giving lower THD than the single NMOS cross-coupled pair topology. The proposed power amplifier can deliver 25 dBm output power to a 50 /spl Omega/ load at 5.7 GHz with 42.6% power-added efficiency (PAE) from a 1.8 V supply voltage.","PeriodicalId":355883,"journal":{"name":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","volume":"39 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2003 International Symposium on Low Power Electronics and Design, 2003. ISLPED '03.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LPE.2003.1231951","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper presents the design of a high efficiency, low THD, 5.7 GHz fully differential power amplifier for wireless communications in a standard 0.18 /spl mu/m CMOS technology. The power amplifier employs a fully differential class-E topology to achieve high power efficiency by exploiting its soft-switching property. In order to achieve high operating frequency, an injection-locked oscillator is utilized, which makes the output voltage of the power amplifier tuned at the input signal frequency. A complementary CMOS cross-coupled pair topology is employed to realize the LC-tank oscillator because it has lower phase-noise, thereby giving lower THD than the single NMOS cross-coupled pair topology. The proposed power amplifier can deliver 25 dBm output power to a 50 /spl Omega/ load at 5.7 GHz with 42.6% power-added efficiency (PAE) from a 1.8 V supply voltage.
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