Kerr nonlinearity in silicon beyond 2.35μm

S. Zlatanović, F. Gholami, A. Simic, L. Liu, N. Alic, M. Nezhad, Y. Fainman, S. Radic
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引用次数: 1

Abstract

We present measurements of χ(3) in silicon in the 2.35 to 2.75μm interval, showing Kerr coefficients close to 1×10−18 m2/W. The results clearly identify silicon as a promising platform for nonlinear processes in the mid-infrared.
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2.35μm以上硅的克尔非线性
我们给出了硅在2.35 ~ 2.75μm区间的χ(3)测量结果,显示Kerr系数接近1×10−18 m2/W。结果清楚地表明硅是中红外非线性过程的一个有前途的平台。
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