Model for drain current based on the exponential distribution of tail states for nanocrystalline silicon thin film transistor

Abstract

In this paper we have modeled the drain current based on the exponential distribution of tail states for nanocrystalline silicon thin film transistor (nc-Si TFT). The degradation of mobility due to the presence of acoustic phonons and interface roughness are taken into account. The model thus developed has been simulated for two different aspect ratios (W/L= 400 μm / 20 μm and W/L = 400 μm / 8 μm), the shape of the curves obtained are similar to the experimental ones validating the developed model.