Functional test pattern generation for maximizing temperature in 3D IC chip stack

S. Srinivasan, S. Kundu
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引用次数: 6

Abstract

In a stacked 3D Integrated Circuit (IC), the total power dissipated per unit surface area typically exceeds that of 2D ICs. This results in creation of a greater number of localized thermal hotspots in individual dies of the 3D IC. The location and temperature of these hotspots depend on the actual workload executing on a 3D IC. Since the power dissipation pattern from the applied workload may vary over time, the location and intensity of thermal hotspots may vary with it. The applied workload may be construed as consisting of phases, where the spatial power dissipation pattern remains constant over a phase and changes only from one phase to another. In this paper (i) we develop a thermal modeling scheme that predicts temperature profile at the end of a program phase, and use (ii) a novel Integer Linear Programming (ILP) formulation to arrange program phases to create worst case temperature at a target location. Experimental results show that, by taking the spatio-temporal effect into account, we can raise temperature of a hotspot much higher than what is possible from purely functional trace. Hotspot temperature maximization is important in design verification and testing.
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三维集成电路芯片堆中温度最大化的功能测试图生成
在堆叠式3D集成电路(IC)中,单位表面面积的总功耗通常超过2D集成电路。这导致在3D IC的单个芯片中产生更多数量的局部热热点。这些热点的位置和温度取决于在3D IC上执行的实际工作负载。由于应用工作负载的功耗模式可能随时间而变化,因此热热点的位置和强度可能随之变化。应用的工作负载可以解释为由相组成,其中空间功率耗散模式在一个相上保持恒定,并且仅从一个相到另一个相变化。在本文中,我们(i)开发了一种热建模方案,用于预测程序阶段结束时的温度分布,并使用(ii)一种新颖的整数线性规划(ILP)公式来安排程序阶段,以在目标位置创建最坏情况下的温度。实验结果表明,通过考虑时空效应,我们可以将热点的温度提高到比纯功能轨迹高得多的水平。热点温度最大化在设计验证和测试中具有重要意义。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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