Width optimization of intercalation doped multilayer graphene nanoribbon interconnects

B. Kumari, Manodipan Sahoo
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引用次数: 1

Abstract

In this work, we have optimized width of Multilayer Graphene Nanoribbon (MLGNR) interconnects by minimizing the crosstalk delay and noise parameters for intermediate and global level interconnects at 11 nm technology node by utilizing the ABCD parameter based model. It is observed that perfectly and nearly specular (i.e P=1 and 0.8 respectively) MLGNR interconnects having width ranging from 10 to 20 nm for intermediate level and from 50 to 100 nm for global level have lesser crosstalk delay and are more immune to noise. When compared to Cu, perfectly and nearly specular MLGNRs outperform Cu in terms of delay for both intermediate and global level but only global level interconnects have better immunity to noise than Cu.
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嵌入掺杂多层石墨烯纳米带互连的宽度优化
在这项工作中,我们利用基于ABCD参数的模型,通过最小化11 nm技术节点的中间和全局级互连的串扰延迟和噪声参数,优化了多层石墨烯纳米带(MLGNR)互连的宽度。观察到,中间电平宽度为10 ~ 20nm,全局电平宽度为50 ~ 100nm的完美和近镜面(即P=1和0.8)MLGNR互连具有较小的串扰延迟和更强的抗噪声能力。与Cu相比,完美和近镜面mlgnr在中间和全局级的延迟方面都优于Cu,但只有全局级互连具有比Cu更好的抗噪声能力。
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