{"title":"Stability aspects of single electron threshold logic based 4 bit carry look ahead adder","authors":"Arpita Ghosh, A. Jain, N. Singh, S. Sarkar","doi":"10.1109/C3IT.2015.7060138","DOIUrl":null,"url":null,"abstract":"This paper demonstrates the detailed design of carry look ahead adder with the single electron tunneling based threshold logic. Tunneling is a mechanism in which a single electron can cross a sandwiched structure of insulating layer between two conducting materials known as tunnel junction. The threshold logic works mainly on the basis of the comparison in between the threshold and the weighted sum. Here single electron tunneling technology is used for designing threshold logic gates. The proposed circuit is simulated in SIMON environment. The simulated input and output waveforms confirm the proper functioning of the designed circuit. One of the main concerns of our design is the circuit stability aspect. The stability plots of the proposed circuit are simulated and the results are also discussed in the paper.","PeriodicalId":402311,"journal":{"name":"Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)","volume":"26 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-03-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 2015 Third International Conference on Computer, Communication, Control and Information Technology (C3IT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/C3IT.2015.7060138","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9
Abstract
This paper demonstrates the detailed design of carry look ahead adder with the single electron tunneling based threshold logic. Tunneling is a mechanism in which a single electron can cross a sandwiched structure of insulating layer between two conducting materials known as tunnel junction. The threshold logic works mainly on the basis of the comparison in between the threshold and the weighted sum. Here single electron tunneling technology is used for designing threshold logic gates. The proposed circuit is simulated in SIMON environment. The simulated input and output waveforms confirm the proper functioning of the designed circuit. One of the main concerns of our design is the circuit stability aspect. The stability plots of the proposed circuit are simulated and the results are also discussed in the paper.