{"title":"Ultraclean Wafer Surfaces For High-Performance ULSI Processing","authors":"T. Ito","doi":"10.1109/ISSM.1994.729432","DOIUrl":null,"url":null,"abstract":"For future ULSI production using cluster chambers or multiprocess chambers, dry cleaning techniques are an attractive alternative to wet processing. Photo excited halogen radicals have been found useful for removing trace metals and native oxides from silicon surfaces without any damaging on silicon oxide and/or silicon substrates. Hydrogen termination has been successfully achieved on","PeriodicalId":114928,"journal":{"name":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","volume":"91 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Symposium on Semiconductor Manufacturing, Extended Abstracts of ISSM","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISSM.1994.729432","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
For future ULSI production using cluster chambers or multiprocess chambers, dry cleaning techniques are an attractive alternative to wet processing. Photo excited halogen radicals have been found useful for removing trace metals and native oxides from silicon surfaces without any damaging on silicon oxide and/or silicon substrates. Hydrogen termination has been successfully achieved on
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