Analytical study of drain current and transconductance for a new cylindrical gate MOSFET structure

Abstract

In this paper, we present a comparison study on the performance of cylindrical gate (CG) MOSFET with graded channel doping (GC), dual metal gate (DMG) and dual oxide thickness (DOT). We develop compact model of short channel characteristics like drain current density, transconductance and drain conductance for this new structure (GC-DMG-DOT) SG MOSFET by solving 2D Poisson equation. The results are compared with the DMG MOSFET and DMG-DOT MOSFET devices. The model results are validated by numerical simulation results obtained by commercially simulator TCAD ATLAS.