A 1mW CMOS limiting amplifier and RSSI for ZigBee™ applications

R. Luo, Xuefei Bai, Shengxi Diao, F. Lin
{"title":"A 1mW CMOS limiting amplifier and RSSI for ZigBee™ applications","authors":"R. Luo, Xuefei Bai, Shengxi Diao, F. Lin","doi":"10.1109/IEEE-IWS.2013.6616734","DOIUrl":null,"url":null,"abstract":"This paper presents a low-power intermediate frequency (IF) limiting amplifier (LA) and received signal strength indicator (RSSI). The LA and RSSI are designed for ZigBee™ receiver at 2MHz IF. To save power, two local loops for offset correction are used in LA chain and a sensitivity of -56dBm is achieved. Each LA gain stage employs cascade diodes load to avoid driving the diode load into velocity saturation region. The indication rang is 50dB within ±2dB linearity error. The core area is 0.11×0.31mm2 using a SMIC 0.18-μm CMOS technology. The overall power consumption is 1mW from a 1.8V supply voltage.","PeriodicalId":344851,"journal":{"name":"2013 IEEE International Wireless Symposium (IWS)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2013-04-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 IEEE International Wireless Symposium (IWS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEEE-IWS.2013.6616734","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5

Abstract

This paper presents a low-power intermediate frequency (IF) limiting amplifier (LA) and received signal strength indicator (RSSI). The LA and RSSI are designed for ZigBee™ receiver at 2MHz IF. To save power, two local loops for offset correction are used in LA chain and a sensitivity of -56dBm is achieved. Each LA gain stage employs cascade diodes load to avoid driving the diode load into velocity saturation region. The indication rang is 50dB within ±2dB linearity error. The core area is 0.11×0.31mm2 using a SMIC 0.18-μm CMOS technology. The overall power consumption is 1mW from a 1.8V supply voltage.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
用于ZigBee™应用的1mW CMOS限制放大器和RSSI
介绍了一种低功率中频限幅放大器和接收信号强度指示器(RSSI)。LA和RSSI专为2MHz中频的ZigBee™接收器而设计。为了节省功耗,在LA链中使用了两个本地环路进行偏移校正,实现了-56dBm的灵敏度。每个增益级采用级联二极管负载,避免将二极管负载驱动到速度饱和区域。指示范围为50dB,线性误差±2dB。核心区域为0.11×0.31mm2,采用中芯0.18 μm CMOS技术。在1.8V电源电压下,总功耗为1mW。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Behavioral modeling of power amplifier with long term memory effects using recurrent neural networks Ultra-wideband (UWB) bandpass filter based on stub-loaded ring resonator Differential bandpass filter with high common-mode rejection ratio inside the differential-mode passband using controllable common-mode transmission zero Analysis and design of CMOS Doherty power amplifier using voltage combining method Experimental study of effects of coaxial cables in magnetic resonant wireless power transfer system
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1