{"title":"Recent development in optically generated slow wave phenomena","authors":"T. Itoh","doi":"10.1109/MELCON.1989.50140","DOIUrl":null,"url":null,"abstract":"The author reviews guided wave phenomena in a transmission line on a heterostructure semiconductor in which slow wave propagation is generated by optical illumination. The device consists of a heterostructure in which a GaAs layer is sandwiched by GaAlAs layers. A typical planar transmission line such as a coplanar waveguide is formed on the top surface. Experimental results are given. The measurement was done at illumination intensities of 3.2 mW/cm/sup 2/, 32.0 mW/cm/sup 2/, and 63.7 mW/cm/sup 2/. A maximum relative phase shift of 60 degrees at 9.5 GHz was observed for an illumination of 3.2 mW/cm/sup 2/. The present work is directed toward the development of an optically controlled phase shifter in a form compatible with monolithic microwave integrated circuit techniques.<<ETX>>","PeriodicalId":380214,"journal":{"name":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","volume":"41 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-04-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. Electrotechnical Conference Integrating Research, Industry and Education in Energy and Communication Engineering',","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MELCON.1989.50140","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The author reviews guided wave phenomena in a transmission line on a heterostructure semiconductor in which slow wave propagation is generated by optical illumination. The device consists of a heterostructure in which a GaAs layer is sandwiched by GaAlAs layers. A typical planar transmission line such as a coplanar waveguide is formed on the top surface. Experimental results are given. The measurement was done at illumination intensities of 3.2 mW/cm/sup 2/, 32.0 mW/cm/sup 2/, and 63.7 mW/cm/sup 2/. A maximum relative phase shift of 60 degrees at 9.5 GHz was observed for an illumination of 3.2 mW/cm/sup 2/. The present work is directed toward the development of an optically controlled phase shifter in a form compatible with monolithic microwave integrated circuit techniques.<>
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