{"title":"Smart power transistors for electronic ballasts","authors":"N. Aiello, A. L. La Barbera, S. Sueri, V. Sukumar","doi":"10.1109/APEC.1997.581451","DOIUrl":null,"url":null,"abstract":"A new vertical power IC process was used to design a cost-competitive, three terminal TO-220 power switching device, the VB348, which is optimized for fluorescent ballast applications. This IC comprises a high voltage power bipolar transistor, MOS emitter switch, drive circuitry and protection features (including overtemperature shutdown). The application in a commercial ballast and the problems related to the various parasitic effects are discussed. Overtemperature protection and reduced variation in switching parameters are key advantages.","PeriodicalId":423659,"journal":{"name":"Proceedings of APEC 97 - Applied Power Electronics Conference","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-02-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of APEC 97 - Applied Power Electronics Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/APEC.1997.581451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A new vertical power IC process was used to design a cost-competitive, three terminal TO-220 power switching device, the VB348, which is optimized for fluorescent ballast applications. This IC comprises a high voltage power bipolar transistor, MOS emitter switch, drive circuitry and protection features (including overtemperature shutdown). The application in a commercial ballast and the problems related to the various parasitic effects are discussed. Overtemperature protection and reduced variation in switching parameters are key advantages.
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