A mixed-signal X-band SiGe multi-function control MMIC for phased array radar applications

D. Carosi, A. Bettidi, A. Nanni, L. Marescialli, A. Cetronio
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引用次数: 38

Abstract

In this paper is reported the design, fabrication and test of a mixed-signal SiGe X-band multi-function control MMIC for phased array radar applications. Said MMIC, fabricated, with the ST-Microelectronics BiCMOS7RF SiGe technology, comprises a 5-bit phase shifter, 5-bit attenuator, SPDT switches, several gain amplifiers and a digital serial to parallel converter to reduce the number of MMIC I/O control lines. The gain amplifiers are implemented using SiGe HBTs, while phase shifter, attenuator and SPDT switches are based on CMOS transistors. The measurement results show a return loss better than 15 dB and a gain of 17 dB, equal in both RX and TX state. In RX mode the obtained noise figure is lower than 10 dB, while in TX mode the output P1dB is higher than 12 dBm. The achieved RF performance, the low power consumption and associated low cost, make this SiGe control-chip an attractive solution for high performance/low cost Tx/Rx components for phased array radar applications.
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混合信号x波段SiGe多功能控制MMIC相控阵雷达应用
本文报道了一种用于相控阵雷达的混合信号SiGe x波段多功能控制MMIC的设计、制作和测试。采用ST-Microelectronics BiCMOS7RF SiGe技术制造的MMIC包括一个5位移相器、5位衰减器、SPDT开关、几个增益放大器和一个数字串行到并行转换器,以减少MMIC I/O控制线的数量。增益放大器使用SiGe hbt实现,而移相器、衰减器和SPDT开关则基于CMOS晶体管。测量结果表明,回波损耗优于15 dB,增益为17 dB,在RX和TX状态下均相等。在RX模式下,得到的噪声系数小于10db,而在TX模式下,输出P1dB大于12dbm。实现的射频性能,低功耗和相关的低成本,使该SiGe控制芯片成为相控阵雷达应用中高性能/低成本Tx/Rx组件的有吸引力的解决方案。
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