A State-Based Predictive Approach for Leakage Reduction of Functional Units

Linfeng Pan, M. Guo, Yanqin Yang, M. Wang, Z. Shao
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引用次数: 1

Abstract

As MOSFETs (metal-oxide-semiconductor field effect transistor) dimensions enter the sub-micrometer region, reducing leakage power becomes a significant issue of VLSI industry. In this paper, we propose a novel prediction approach to predict idleness of functional units for leakage energy management. Using a state-based predictor, historical utilization information of functional units is exploited to adjust the state of the predictor so as to enhance the accuracy of prediction. We implement our approach based on SimpleScalar and conduct experiments with a suite of fourteen benchmarks from Trimaran. The experimental results show that our approach achieves the better results compared with the previous work.
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基于状态的功能单元泄漏减少预测方法
随着mosfet(金属氧化物半导体场效应晶体管)尺寸进入亚微米区域,降低泄漏功率成为VLSI行业的一个重要问题。在本文中,我们提出了一种新的预测方法来预测功能单元的空闲状态,用于泄漏能量管理。利用基于状态的预测器,利用功能单元的历史使用信息来调整预测器的状态,从而提高预测的准确性。我们基于SimpleScalar实现了我们的方法,并使用来自Trimaran的14个基准测试套件进行了实验。实验结果表明,与以往的工作相比,我们的方法取得了更好的效果。
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