{"title":"Parameters Identification of Embedded PTAT Temperature Sensors for CMOS Circuits","authors":"A. Golda, A. Kos","doi":"10.1109/MIXDES.2007.4286190","DOIUrl":null,"url":null,"abstract":"In this paper, we describe the parameters identification results of PTAT (proportional to absolute temperature) temperature sensors that are implemented in the test chip and dedicated to CMOS integrated circuits. Theirs principles of operation are based on the vertical PNP structure. These sensing elements are uniformly distributed on the chip surface. The chip is dedicated to analyses and verifications of various electro-thermal phenomena in microelectronic VLSI circuits and is fabricated in CMOS 0.7 mum technology. The measurements were performed in a thermal chamber for the temperature range of 288-358 K. The achieved sensitivities of the temperature sensors are within following limits 3.44 to 4.82 mV/K.","PeriodicalId":310187,"journal":{"name":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","volume":"36 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2007-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2007 14th International Conference on Mixed Design of Integrated Circuits and Systems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MIXDES.2007.4286190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
In this paper, we describe the parameters identification results of PTAT (proportional to absolute temperature) temperature sensors that are implemented in the test chip and dedicated to CMOS integrated circuits. Theirs principles of operation are based on the vertical PNP structure. These sensing elements are uniformly distributed on the chip surface. The chip is dedicated to analyses and verifications of various electro-thermal phenomena in microelectronic VLSI circuits and is fabricated in CMOS 0.7 mum technology. The measurements were performed in a thermal chamber for the temperature range of 288-358 K. The achieved sensitivities of the temperature sensors are within following limits 3.44 to 4.82 mV/K.
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