MOSFET optimization toward power efficient circuit design

Abstract

The report focuses on an optimization scheme of advanced MOSFETs for designing power efficient circuits. For the purpose the physics-based compact model HiSIM2 is applied so that the relationship between device and circuit characteristics can be investigated properly. It is demonstrated that the short-channel effect, which is usually measured by the threshold-voltage shift compared to the long-channel MOSFET, provides the consistent measure as the short-channel effect on device performance degradation. However, the circuitry performances degradation such as the power loss cannot be predicted sufficiently by the short channel effect alone. It is demonstrated that the power efficient circuit design can be achieved by minimizing the additional leakage current caused by the short-channel contribution.