{"title":"Influence of device geometry on DC, AC and SOA of high speed ffv bipolar transistors","authors":"R. Dutta, T. Krutsick, J. Siket","doi":"10.1109/BIPOL.2004.1365807","DOIUrl":null,"url":null,"abstract":"Detailed characterizations were performed to evaluate the influence of device geometry on the L X , AC and SOA performances of power bipolar transistors. Appropriate performance indices normalized to total device area were defmed, leading to recommendation of a novel baseemitter geometry for optimal performance. Their implementation resulted in significant reduction in silicon area for both NPN and PNP.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"72 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365807","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Detailed characterizations were performed to evaluate the influence of device geometry on the L X , AC and SOA performances of power bipolar transistors. Appropriate performance indices normalized to total device area were defmed, leading to recommendation of a novel baseemitter geometry for optimal performance. Their implementation resulted in significant reduction in silicon area for both NPN and PNP.
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