{"title":"Single transverse mode, low threshold current vertical cavity surface emitting laser","authors":"Y.A. Wu, C. Chang-Hasnain, G.S. Li, R. Nabiev","doi":"10.1109/DRC.1993.1009586","DOIUrl":null,"url":null,"abstract":"Summary form only given. The authors report buried heterostructure (BH) vertical cavity surface emitting lasers (VCSELs) emitting a single TEM/sub 00/ mode with a predetermined polarization and low-threshold currents. A threshold current of 0.8 mA and a record-low threshold-density of 490 A/cm/sup 2/ have been achieved with 8 and 32 mu m diameter lasers, respectively. The VCSEL heterostructure used includes three InGaAs strained quantum wells, and 15 and 20.5 pairs of GaAs-AlAs as the top and bottom Bragg reflectors, respectively, grown by molecular beam epitaxy. The threshold currents of 8, 16, and 32 mu m BH VCSELs are 0.8, 1.2, and 3.5 mA, respectively. Both the 8 and 16 mu m BH VCSELs emit a single TEM/sub 00/ mode up to four to five times threshold. The emission is linearly polarized in a predetermined direction. The stable single-mode behavior is attributed to the combination of index-guiding in the active region and anti-index-guiding in the Bragg reflectors. >","PeriodicalId":310841,"journal":{"name":"51st Annual Device Research Conference","volume":"109 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-06-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"51st Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1993.1009586","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Summary form only given. The authors report buried heterostructure (BH) vertical cavity surface emitting lasers (VCSELs) emitting a single TEM/sub 00/ mode with a predetermined polarization and low-threshold currents. A threshold current of 0.8 mA and a record-low threshold-density of 490 A/cm/sup 2/ have been achieved with 8 and 32 mu m diameter lasers, respectively. The VCSEL heterostructure used includes three InGaAs strained quantum wells, and 15 and 20.5 pairs of GaAs-AlAs as the top and bottom Bragg reflectors, respectively, grown by molecular beam epitaxy. The threshold currents of 8, 16, and 32 mu m BH VCSELs are 0.8, 1.2, and 3.5 mA, respectively. Both the 8 and 16 mu m BH VCSELs emit a single TEM/sub 00/ mode up to four to five times threshold. The emission is linearly polarized in a predetermined direction. The stable single-mode behavior is attributed to the combination of index-guiding in the active region and anti-index-guiding in the Bragg reflectors. >
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