{"title":"Dynamic Characteristics of Normally-OFF Silicon Carbide JFET","authors":"K. Shili, R. Gharbi, M. B. Karoui","doi":"10.1109/scc53769.2021.9768362","DOIUrl":null,"url":null,"abstract":"We propose in this paper the study of the dynamic behavior of the JFET Normally-off based on 4H-SiC (1200V-17A), which depends on junction capacitances between the electrodes. The evolution of these capacitances as a function of the applied voltage shows the non-linearity between these parameters. The dynamic behavior in switching of the JFET has been studied and compared with the results found by simulation using PSPICE. According to the forms of experimental and simulation waves, we have able to extract the switching time: turn-on Ton and turn-off Toff which are low ( of the order of 10-6s) and still proves the rapidity of the switching speed of these transistors.","PeriodicalId":365845,"journal":{"name":"2021 IEEE 2nd International Conference on Signal, Control and Communication (SCC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-12-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 IEEE 2nd International Conference on Signal, Control and Communication (SCC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/scc53769.2021.9768362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We propose in this paper the study of the dynamic behavior of the JFET Normally-off based on 4H-SiC (1200V-17A), which depends on junction capacitances between the electrodes. The evolution of these capacitances as a function of the applied voltage shows the non-linearity between these parameters. The dynamic behavior in switching of the JFET has been studied and compared with the results found by simulation using PSPICE. According to the forms of experimental and simulation waves, we have able to extract the switching time: turn-on Ton and turn-off Toff which are low ( of the order of 10-6s) and still proves the rapidity of the switching speed of these transistors.
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