X. Chauffleur, P. Tounsi, J. Dorkel, P. Dupuy, J. Fradin
{"title":"Non linear 3D electrothermal investigation on power MOS chips","authors":"X. Chauffleur, P. Tounsi, J. Dorkel, P. Dupuy, J. Fradin","doi":"10.1109/BIPOL.2004.1365768","DOIUrl":null,"url":null,"abstract":"Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account. The coupling between these two phenomena gives us the realistic voltage and current distributions in more than the temperature mapping. Results obtained from simpler approaches are compared to the reference solution.","PeriodicalId":447762,"journal":{"name":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-12-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Bipolar/BiCMOS Circuits and Technology, 2004. Proceedings of the 2004 Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.2004.1365768","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
Based on the use of a boundary element solver, a fully coupled electrical and thermal 3D modeling for low voltage power MOS transistors is proposed. The analogy between the 3D heat conduction and the 3D electrical conduction is turned to good account. The coupling between these two phenomena gives us the realistic voltage and current distributions in more than the temperature mapping. Results obtained from simpler approaches are compared to the reference solution.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
