A Broadband 1-dB Noise Figure GaAs Low-Noise Amplifier for Millimeter-Wave 5G Base-Stations

Abstract

A broadband low-noise amplifier (LNA) with sub-l dB noise figure (NF), intended for use in millimeter-wave 5G base-stations, have been fabricated in $0.1-\mu \text{m}$ InGaAs pHEMT technology. Common-source topology with inductive source degeneration is utilized for simultaneous noise and input match. Measurement results show this LNA achieves a gain of 7.9 dB at 24-GHz and a −1 dB bandwidth of 5-GHz, while consuming 13 mW from a 1-V supply. The noise figure is below 1.5 dB from 21-GHz to 27-GHz, with a lowest noise figure of 0.7 dB at 26-GHz.