Correlation betweenWork Function and Silicon Thickness of Double Gate Junctionless Field Effect Transistor

Abstract

The correlation between silicon thickness and work function difference plays an important role to achieve best performance of field effect transistor. In this paper, a p-type double gate junctionless field effect transistor (DGJLT) performance is studied by varying the silicon thickness. Further, an interesting observation related to the correlation between silicon thickness and work function of the gate material is made. The best performance parameters of device are observed for lesser silicon thickness. However, on increasing the silicon thickness the deviceperformance can be maintained by tuning the work function of the gate material. The performance of the device is studied on the basis of different parameters like OFF current, ON current, ON/OFF current ratio, subthreshold slope (SS) and threshold voltage.