Silicon Carbide (SiC) based Constant DC Current Source for DC Current Transformer Calibration

Abstract

A single phase AC-DC converter is extremely important parameter of major sectors of power systems, electronic circuitries, computer power supplies, communication and automation systems. The converter system should be compact, efficient and reliable as it powers the system throughout the year continuously. The power density and performance efficiency of the controlled rectifier circuits are sufficiently enhanced using the next level semiconductor switches like Silicon Carbide (SiC) MOSFET having wide band gap structure. The advantages in the structural properties of the SiC MOSFET device face the challenges in terms of the costing of the device. In this paper a single phase close loop control rectifier with switching device as SiC MOSFET and diodes as Schottky SiC diode is proposed which minimizes the reverse recovery losses of semiconductor switches which gets wipe out. Proposed rectifier is designed for powering the high precision calibration of Direct Current Current Transformer (DCCT) which works on the Hall Effect principle for high DC current measurements of Kilo ampere range. The circuit operational analysis and simulation presented validate the advantages of proposed rectifier in comparison with traditional circuit configuration.