Chaymaa Haloui, G. Toulon, J. Tasselli, Y. Cordier, É. Frayssinet, K. Isoird, F. Morancho, M. Gavelle
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引用次数: 0
Abstract
A new normally-off AlGaN/GaN HEMT structure is proposed. The regrowth of a P-GaN layer on the AlGaN/GaN heterostructure after the gate recess allows the achievement of the enhancement mode. A shift in the threshold voltage to positive values has been proved through simulation results. A precise control of the etch depth for the gate recess is detailed.
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