{"title":"The creation of the narrow electron and ion beams for a modification of a surface in nanometric scale","authors":"O. L. Golubev, V. N. Shrednik","doi":"10.1109/DEIV.2004.1418597","DOIUrl":null,"url":null,"abstract":"The methods of creation of the point sources of electrons and ions with localization of emission in a small angle based on field electron emission and field evaporation are considered. Examples of creation of such sources with use of emitters from pure metals, alloys and complex multicomponent compounds are given. Application of all described methods in a combination to a variety of materials of emitters enabler to create a great set of the point sources of the charged particles with various properties.","PeriodicalId":137370,"journal":{"name":"XXIst International Symposium on Discharges and Electrical Insulation in Vacuum, 2004. Proceedings. ISDEIV.","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2004-09-27","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"XXIst International Symposium on Discharges and Electrical Insulation in Vacuum, 2004. Proceedings. ISDEIV.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DEIV.2004.1418597","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The methods of creation of the point sources of electrons and ions with localization of emission in a small angle based on field electron emission and field evaporation are considered. Examples of creation of such sources with use of emitters from pure metals, alloys and complex multicomponent compounds are given. Application of all described methods in a combination to a variety of materials of emitters enabler to create a great set of the point sources of the charged particles with various properties.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
