{"title":"Dielectric Material (HfO2) Effect on Surface Potential for CSDG MOSFET","authors":"Mandisi Shunqukela, V. Srivastava","doi":"10.1109/ICCCI.2018.8441369","DOIUrl":null,"url":null,"abstract":"This work discusses about the surface potential for the Cylindrical Surrounding Double-Gate (CSDG) MOSFET. This has been done on the basis of analytical 2-D model of the CSDG MOSFET w.r.t. the surface potential. Gradual channel analysis approach has been used in the process of developing the potential descriptive model. The analytical study has been performed using the Hafnium Oxide (HfO2). The HfO2 is a high-dielectric material that is promising to minimise Short Channel Effects (SCE) when interfaced with the existing Silicon Dioxide (SiO2). Therefore combined oxide configurations has been analysed using SiO2 and HfO2. It has been observed that the CSDG MOSFET with combined oxide material is suitable to minimise the SCE and can be used for fast switching operations.","PeriodicalId":141663,"journal":{"name":"2018 International Conference on Computer Communication and Informatics (ICCCI)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Conference on Computer Communication and Informatics (ICCCI)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICCCI.2018.8441369","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
This work discusses about the surface potential for the Cylindrical Surrounding Double-Gate (CSDG) MOSFET. This has been done on the basis of analytical 2-D model of the CSDG MOSFET w.r.t. the surface potential. Gradual channel analysis approach has been used in the process of developing the potential descriptive model. The analytical study has been performed using the Hafnium Oxide (HfO2). The HfO2 is a high-dielectric material that is promising to minimise Short Channel Effects (SCE) when interfaced with the existing Silicon Dioxide (SiO2). Therefore combined oxide configurations has been analysed using SiO2 and HfO2. It has been observed that the CSDG MOSFET with combined oxide material is suitable to minimise the SCE and can be used for fast switching operations.
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