{"title":"A comparative study of dielectric properties of As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ glassy systems","authors":"G. Bordovsky, V.A. Bordovsky, R. Castro","doi":"10.1109/ISE.2002.1042964","DOIUrl":null,"url":null,"abstract":"We report about the peculiarities of the dielectric properties of a-As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ (x=20 at.%) layers. The As/sub 2/Se/sub 3/ layers are characterized by gradual decrease of /spl epsiv/ with frequency and increase with temperature. A broad maximum is registered on tg/spl delta/-f dependence. At low frequencies f<10/sup -1/ Hz the loss factor increases with temperature. For modified system As/sub 2/Se/sub 3/Bi/sub x/ much greater decrease of /spl epsi/ with frequency and increase with temperature is found. tg/spl delta/-f dependence of this system demonstrates no maximum and at frequencies f<10/sup -1/ Hz the loss factor decreases with temperature. The mentioned above results confirm the assumption that the metal dopants act as positively charge impurities.","PeriodicalId":331115,"journal":{"name":"Proceedings. 11th International Symposium on Electrets","volume":"104 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2002-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings. 11th International Symposium on Electrets","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISE.2002.1042964","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
We report about the peculiarities of the dielectric properties of a-As/sub 2/Se/sub 3/ and As/sub 2/Se/sub 3/Bi/sub x/ (x=20 at.%) layers. The As/sub 2/Se/sub 3/ layers are characterized by gradual decrease of /spl epsiv/ with frequency and increase with temperature. A broad maximum is registered on tg/spl delta/-f dependence. At low frequencies f<10/sup -1/ Hz the loss factor increases with temperature. For modified system As/sub 2/Se/sub 3/Bi/sub x/ much greater decrease of /spl epsi/ with frequency and increase with temperature is found. tg/spl delta/-f dependence of this system demonstrates no maximum and at frequencies f<10/sup -1/ Hz the loss factor decreases with temperature. The mentioned above results confirm the assumption that the metal dopants act as positively charge impurities.
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