Novel wide band high-efficiency active harmonic injection power amplifier concept

A. Almuhaisen, P. Wright, J. Lees, P. Tasker, S. Cripps, J. Benedikt
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引用次数: 39

Abstract

This paper introduces a novel approach for the realization of wide band (>octave) high-efficiency (>95%) high Power Amplifiers (PAs). The proposed concept utilizes active harmonic injection to achieve the appropriate waveform shaping of the voltage/current waveforms necessary to deliver simultaneously both high power and high efficiency operation. The new PA structure thus consists of two parallel PAs where the main PA generates fundamental power and an auxiliary PA injects a harmonic signal at the output of the main PA to perform waveform shaping. An active harmonic injection PA circuit designed around the 10 W GaN transistor is demonstrated, along with the basic mathematical analysis and computer simulation of this new mode of operation. The measured performance of the PA demonstrator realized at 0.9 GHz provided a drain efficiency of 74.3% at P1dB, validating the concept and its potential.
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新型宽带高效有源谐波注入功率放大器概念
本文介绍了一种实现宽带(>倍频程)高效率(>95%)大功率放大器的新方法。所提出的概念利用有源谐波注入来实现电压/电流波形的适当波形整形,从而同时提供高功率和高效率的运行。因此,新的PA结构由两个并联PA组成,其中主PA产生基波功率,辅助PA在主PA的输出端注入谐波信号以执行波形整形。本文演示了一种围绕10w GaN晶体管设计的有源谐波注入放大器电路,并对这种新工作模式进行了基本的数学分析和计算机模拟。在0.9 GHz下实现的PA演示器的测量性能在P1dB下提供了74.3%的漏极效率,验证了该概念及其潜力。
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