Silicon Nanowires embedded pressure sensor with annularly grooved diaphragm for sensitivity improvement

2014 IEEE Ninth International Conference on Intelligent Sensors, Sensor Networks and Information Processing (ISSNIP) Pub Date : 2014-04-21 DOI:10.1109/ISSNIP.2014.6827620

Songsong Zhang, Tao Wang, Chengkuo Lee, Liang Lou, W. Tsang, D. Kwong

引用次数: 3

Abstract

A NEMS piezoresistive pressure sensor with annular grooves on the circular diaphragm is presented here. Silicon Nanowires (SiNWs) are embedded as sensing elements at the edge of the diaphragm. This new diaphragm structure improves the device sensitivity by 2.5 times under a low pressure range of 0~120 mmHg with respect to our previously reported flat diaphragm pressure sensor. With the advantage of superior piezoresistive effect of SiNWs, this sensitivity improvement is even remarkable in contrast to other recently reported piezoresistive pressure sensing devices. Additionally, by leveraging the miniaturized sensing diaphragm (radius of 100 μm), the sensor can be potentially used as implantable device for low pressure sensing applications.

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带环形凹槽膜片的硅纳米线嵌入式压力传感器，可提高灵敏度

本文介绍了一种在圆形膜片上带有环形凹槽的 NEMS 压阻压力传感器。硅纳米线 (SiNW) 作为传感元件被嵌入膜片边缘。在 0~120 mmHg 的低压范围内，这种新型膜片结构将器件的灵敏度提高了 2.5 倍，而此前我们已报道过平面膜片压力传感器。由于 SiNWs 具有卓越的压阻效应，与最近报道的其他压阻压力传感设备相比，灵敏度的提高更为显著。此外，通过利用微型传感膜片（半径为 100 μm），该传感器有可能用作低压传感应用的植入式设备。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2014 IEEE Ninth International Conference on Intelligent Sensors, Sensor Networks and Information Processing (ISSNIP)

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