A Novel Method for Calculating the Noise Figure of Microwave MESFET Mixers

J. Dreifuss, A. Madjar, A. Bar-Lev
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引用次数: 1

Abstract

A new computer analysis method is presented by which the noise contributions of the various noise sources within a MESFET mixer can be determined and its overall single side-band and double sideband noise figure and noise temperature calculated. The method utilizes a frequency conversion matrix of a MESFET mixer which was described previously. The simulation program was run for a mixer circuit based on NEC720 transistor and the results for the noise sources and noise figure behaviour as functions of the LO power are presented and compared to measured values. An optimal operating point, from the standpoint of minimum noise figure, can thus be determined for transistor biasing conditions and the LO input power.
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一种计算微波MESFET混频器噪声系数的新方法
提出了一种计算MESFET混频器内各种噪声源的噪声贡献并计算其整体单边带和双向带噪声系数和噪声温度的计算机分析方法。该方法利用前面描述的MESFET混频器的频率转换矩阵。对基于NEC720晶体管的混频器电路进行了仿真,给出了噪声源和噪声系数随本端功率变化的结果,并与实测值进行了比较。因此,从最小噪声系数的角度来看,可以确定晶体管偏置条件和本LO输入功率的最佳工作点。
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