Terahertz travelling wave amplifier design using Ballistic Deflection Transistor

Huan Wang, J. Millithaler, R. Knepper, M. Margala
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引用次数: 2

Abstract

In this paper, we present a Terahertz (THz) Travelling-Wave-Amplifier (TWA) design using a Ballistic Deflection Transistor (BDT). The BDT is an emerging functional device based on InGaAs/InAlAs/InP, which can operate at THz frequencies. A transistor model is proposed, based on data provided by Monte Carlo simulation. We have developed a new nearly lossless THz transmission line (0.46dB/mm over 0.8–1.5THz simulated in ANSYS HFSS), called Parallel Plate Dielectric Waveguide with Signal line (PPDWS), and we are able to design a 24-stage BDT TWA with an ADS simulated gain over 10dB at 1–1.5THz. This THz BDT amplifier design opens up new possibilities by increasing the speed by 100 times compared to existing technologies.
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利用弹道偏转晶体管设计太赫兹行波放大器
在本文中,我们提出了一种使用弹道偏转晶体管(BDT)的太赫兹行波放大器(TWA)设计。BDT是一种基于InGaAs/InAlAs/InP的新兴功能器件,可以在太赫兹频率下工作。在蒙特卡罗仿真数据的基础上,提出了一种晶体管模型。我们开发了一种新的近无损太赫兹传输线(在ANSYS HFSS中模拟0.8-1.5THz范围内0.46dB/mm),称为带信号线的平行板介质波导(PPDWS),我们能够设计出1-1.5THz范围内ADS模拟增益超过10dB的24级BDT TWA。与现有技术相比,这种太赫兹BDT放大器设计通过将速度提高100倍,开辟了新的可能性。
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