{"title":"CO2 laser doping of Si layers with use of B2O3 as an effective procedure for increasing the sensitivity of detectors in security systems","authors":"W. Proszak, O. Bonchyk, S. Kiyak, Zenon Gotral","doi":"10.1117/12.438441","DOIUrl":null,"url":null,"abstract":"This paper presents results of researches related with solid state doping of Si layers with use CO2 laser irradiation and B203 dopant. Unique properties of laser doping process let us create 10-100 nm doped layers of repeatable parameters.","PeriodicalId":156625,"journal":{"name":"Systems of Optical Security","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-08-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Systems of Optical Security","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1117/12.438441","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This paper presents results of researches related with solid state doping of Si layers with use CO2 laser irradiation and B203 dopant. Unique properties of laser doping process let us create 10-100 nm doped layers of repeatable parameters.
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