Jeffrey S. Glenn, Mary E. Case, David L. Harame, B. Meyerson, R. Poisson
{"title":"12-GHz Gilbert mixers using a manufacturable Si/SiGe epitaxial-base bipolar technology","authors":"Jeffrey S. Glenn, Mary E. Case, David L. Harame, B. Meyerson, R. Poisson","doi":"10.1109/BIPOL.1995.493894","DOIUrl":null,"url":null,"abstract":"We present Gilbert mixer circuits, fabricated with an epitaxial-base Si/SiGe bipolar technology, having bandwidths of up to 12 GHz and gain-bandwidth products in excess of 22 GHz.","PeriodicalId":230944,"journal":{"name":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","volume":"44 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-10-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"29","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of Bipolar/Bicmos Circuits and Technology Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/BIPOL.1995.493894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 29
Abstract
We present Gilbert mixer circuits, fabricated with an epitaxial-base Si/SiGe bipolar technology, having bandwidths of up to 12 GHz and gain-bandwidth products in excess of 22 GHz.
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