{"title":"A GaN HEMT Class-F amplifier for UMTS/WCDMA applications","authors":"F. N. Khan, F. Mohammadi, M. Yagoub","doi":"10.1109/RFM.2008.4897420","DOIUrl":null,"url":null,"abstract":"In this work, the authors present a highly efficient GaN HEMT Class-F amplifier designed for Universal Mobile Telecommunications Systems using Wideband Code Division Multiple Access (UMTS/WCDMA). The amplifier has a peak PAE of 76% with an output power of 10.5 W. A comparison between class-F and inverse Class-F was also made.","PeriodicalId":329128,"journal":{"name":"2008 IEEE International RF and Microwave Conference","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 IEEE International RF and Microwave Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFM.2008.4897420","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
In this work, the authors present a highly efficient GaN HEMT Class-F amplifier designed for Universal Mobile Telecommunications Systems using Wideband Code Division Multiple Access (UMTS/WCDMA). The amplifier has a peak PAE of 76% with an output power of 10.5 W. A comparison between class-F and inverse Class-F was also made.
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