A. Es-saghiri, El-mahjoub Boufounas, A. El Amrani, B. Lucas
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引用次数: 0
Abstract
The performance of a pentacene based organic thin film transistor with polymethylmethacrylate as a dielectric insulator and indium tin oxide based electrical gate is investigated. On the one hand, we showed that the threshold voltage increases with gate voltage, and on the other hand that it decreases with drain voltage. Furthermore, high current modulation ratios of 5×106 and 7.5×107 are reported for a lower drain voltage, respectively. These results are very important since current ratio exceeds a value of 107 is a quite interesting requirement than high mobility for some logic gate applications.
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