Flashover time delay characteristics of grooved insulators under nanosecond pulse voltage in vacuum

Guo-Qiang Su, Baipeng Song, Yi-Bo Wang, H. Mu, Guanjun Zhang
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引用次数: 2

Abstract

For dielectric-vacuum compound insulation systems, the discharges usually occur across the insulator surface with an onset voltage much lower than the breakdown voltage for vacuum gap of the same length, which is the main cause leading to insulation failure. It has always been a hot topic to improve the surface insulation strength in vacuum. In this paper, the relationship between the flashover time delay and electric field is studied under nanosecond impulse voltage. Experiment results suggest that the flashover time delay was proportional to N-th power of electric field for grooved insulators with different parameters. For grooved insulator, the flashover channel prefer to develop along the grooves rather than pass over the groove wall. The blocking effect of grooves to the electron multiplication in cathode-anode direction leads to the increased time delay. A narrow band of electric field with respect to time delay is formed over the flat samples. The breakdown electric field of a grooved insulator was increased by more than 100% than that of a flat one. The flashover electric field tends to be saturated when the groove depth is more than 2 mm for both PTFE and PMMA, which is correlated with the trajectory of electrons travelling across insulator surface. Grooves near electrode is more effective to increase surface insulation strength than grooves in middle area, which can be of great help to guide the structure optimization in engineering application.
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真空纳秒脉冲电压下槽形绝缘子闪络延迟特性研究
对于介电-真空复合绝缘系统,在相同长度的真空间隙下,放电通常发生在绝缘子表面,其起始电压远低于击穿电压,这是导致绝缘失效的主要原因。提高真空环境下的表面绝缘强度一直是研究的热点。本文研究了纳秒脉冲电压下的闪络延时与电场的关系。实验结果表明,对于不同参数的槽形绝缘子,闪络延时与电场的n次幂成正比。对于槽状绝缘子,闪络通道倾向于沿槽状发展而不是越过槽壁。沟槽对阴极-阳极方向上电子增殖的阻断作用导致了时间延迟的增加。在平面样品上形成了一个相对于时间延迟的窄带电场。沟槽绝缘子的击穿电场比扁平绝缘子的击穿电场增大100%以上。当槽深大于2mm时,聚四氟乙烯和PMMA的闪络电场趋于饱和,这与电子在绝缘子表面的运动轨迹有关。电极附近开槽比中间开槽更能有效地提高表面绝缘强度,对工程应用中的结构优化有很大的指导作用。
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