A Capacitor DAC for Charge Redistribution Analog to Digital Converter with Successive Approximation

P. Vancura, M. Havranek, T. Benka, Z. Janoška, J. Jakovenko, V. Vrba
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引用次数: 2

Abstract

The recent analog to digital converters, with the successive approximation (SAR ADC), are widely used for their high speed, low power operation and accuracy. SAR ADC demands precise internal digital to analog converter (DAC). To save power, the DAC is mainly implemented using capacitors (CDAC). Its precision depends mostly on layout implementation which must minimize the various parasitic effects. This paper presents two new layout design approaches of CDAC for SAR ADC used in a pixel detector implemented in 180 nm SOI technology. The various types, topology, size of the capacitors, power consumption, layout area, speed, and any nonlinearities are discussed. First is a new layout design of the 10-bit split capacitor DAC with Metal-Insulator-Metal capacitors, and, the second, is a 8-bit binary-weighted DAC with Metal-Oxide-Metal capacitors. The new layout of the metal-oxide-metal capacitor topology provides better accuracy of the DAC. The layout styles for each of CDAC, with low parasitic capacitances, are shown. The post layout simulations confirm that both capacitor arrays have an integral, differential nonlinearity, less than one least significant bit without a calibration scheme.
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一种用于逐次逼近的电荷再分配模数转换器的电容DAC
基于逐次逼近的模数转换器(SAR ADC)以其高速度、低功耗和精度得到了广泛的应用。SAR ADC需要精确的内部数模转换器(DAC)。为了节省功耗,DAC主要采用电容(CDAC)实现。其精度主要取决于布局实现,而布局实现必须使各种寄生效应最小化。本文提出了两种新的CDAC布局设计方法,用于SAR ADC在180nm SOI技术实现的像素探测器中。讨论了电容器的各种类型、拓扑、尺寸、功耗、布局面积、速度和任何非线性。首先是采用金属-绝缘体-金属电容的10位分体电容DAC的新布局设计,其次是采用金属-氧化物-金属电容的8位二元加权DAC。金属-氧化物-金属电容器拓扑结构的新布局提供了更好的DAC精度。图中给出了每一个具有低寄生电容的CDAC的布局样式。后布局仿真证实,两个电容阵列都具有积分微分非线性,且在没有校准方案的情况下小于一个最低有效位。
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