Performance modeling of intercalation doped graphene-nanoribbon interconnects

Subhajit Das, Debaprasad Das, H. Rahaman
{"title":"Performance modeling of intercalation doped graphene-nanoribbon interconnects","authors":"Subhajit Das, Debaprasad Das, H. Rahaman","doi":"10.1109/ISDCS.2018.8379685","DOIUrl":null,"url":null,"abstract":"In this work, we have presented the temperature dependent equivalent single conductor (ESC) model and performance analysis of undoped and doped multilayer graphene nanoribbon (MLGNR) interconnects. The common resistive model of both top-contact and side-contact multilayer GNR interconnects has been demonstrated using multi-conductor based methodology. The propagation delay of pristine (undoped), Arsenic pentafluoride (AsF5), Ferric chloride (FeCl3) and Lithium (Li) intercalation doped MLGNR interconnect is investigated for different temperature and different interconnect length at 16nm technology node. The results show a considerable rise of delay of MLGNR interconnects with the rise of temperature. It is found that AsF5-, FeCl3- and Li-intercalated top-contact MLGNR interconnects show superior resistive performance than that of its pristine counterpart at higher temperature. Li-intercalated TC-MLGNR has been found to be the fastest among all types of MLGNR interconnects as well as conventional Cu over the temperature range from 150K to 450K.","PeriodicalId":374239,"journal":{"name":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 International Symposium on Devices, Circuits and Systems (ISDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDCS.2018.8379685","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In this work, we have presented the temperature dependent equivalent single conductor (ESC) model and performance analysis of undoped and doped multilayer graphene nanoribbon (MLGNR) interconnects. The common resistive model of both top-contact and side-contact multilayer GNR interconnects has been demonstrated using multi-conductor based methodology. The propagation delay of pristine (undoped), Arsenic pentafluoride (AsF5), Ferric chloride (FeCl3) and Lithium (Li) intercalation doped MLGNR interconnect is investigated for different temperature and different interconnect length at 16nm technology node. The results show a considerable rise of delay of MLGNR interconnects with the rise of temperature. It is found that AsF5-, FeCl3- and Li-intercalated top-contact MLGNR interconnects show superior resistive performance than that of its pristine counterpart at higher temperature. Li-intercalated TC-MLGNR has been found to be the fastest among all types of MLGNR interconnects as well as conventional Cu over the temperature range from 150K to 450K.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
嵌入掺杂石墨烯-纳米带互连的性能建模
在这项工作中,我们提出了温度相关的等效单导体(ESC)模型和未掺杂和掺杂多层石墨烯纳米带(MLGNR)互连的性能分析。采用基于多导体的方法,对顶接触和侧接触多层GNR互连的共同电阻模型进行了论证。研究了原始(未掺杂)、五氟化砷(AsF5)、氯化铁(FeCl3)和锂(Li)插层掺杂MLGNR互连在不同温度和不同互连长度下在16nm技术节点上的传输延迟。结果表明,随着温度的升高,MLGNR互连的延迟有较大的增加。研究发现,在较高的温度下,AsF5-、FeCl3-和li嵌入的顶触MLGNR互连比原始的MLGNR互连具有更好的电阻性能。在150K至450K的温度范围内,li插层TC-MLGNR是所有类型的MLGNR互连以及传统Cu互连中速度最快的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A RISC-V ISA compatible processor IP for SoC A novel reversible synthesis of array multiplier Modeling of multi-dimensional system and its application for robot development Machine learning algorithm for autonomous control of walking robot Performance prediction of SOI FinFETs in the presence of random discrete dopants
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1