Energy-efficient 32/spl times/32-bit multiplier in tunable near-zero threshold CMOS

V. Svilan, M. Matsui, J. Burr
{"title":"Energy-efficient 32/spl times/32-bit multiplier in tunable near-zero threshold CMOS","authors":"V. Svilan, M. Matsui, J. Burr","doi":"10.1109/LPE.2000.155297","DOIUrl":null,"url":null,"abstract":"An 80,000 transistor, low swing, 32/spl times/32-bit multiplier was fabricated in a standard 0.35 /spl mu/m, V/sub th/=0.5 V CMOS process and in a 0.35 /spl mu/m, back-bias tunable, near-zero V/sub th/ process. While standard CMOS at V/sub dd/=3.3 V runs at 136 MHz, the same performance can be achieved in the low-V/sub th/ version at V/sub dd/=1.3 V, resulting in more than 5 times lower power. Similar power reductions are obtained for frequencies down to 10 MHz. In addition, the low-V/sub th/ version is able to run at 188 MHz, which is 38% faster than standard CMOS.","PeriodicalId":188020,"journal":{"name":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","volume":"43 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/LPE.2000.155297","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6

Abstract

An 80,000 transistor, low swing, 32/spl times/32-bit multiplier was fabricated in a standard 0.35 /spl mu/m, V/sub th/=0.5 V CMOS process and in a 0.35 /spl mu/m, back-bias tunable, near-zero V/sub th/ process. While standard CMOS at V/sub dd/=3.3 V runs at 136 MHz, the same performance can be achieved in the low-V/sub th/ version at V/sub dd/=1.3 V, resulting in more than 5 times lower power. Similar power reductions are obtained for frequencies down to 10 MHz. In addition, the low-V/sub th/ version is able to run at 188 MHz, which is 38% faster than standard CMOS.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
可调谐近零阈值CMOS的高效32/spl倍/32位乘法器
采用标准的0.35 /spl mu/m, V/sub /=0.5 V CMOS工艺和0.35 /spl mu/m,反向偏置可调谐,近零V/sub /工艺制备了80000晶体管,低摆幅,32/spl倍/32位倍频倍增管。当标准CMOS在V/sub dd/=3.3 V时运行在136mhz时,在V/sub dd/=1.3 V的低V/sub /版本中可以实现相同的性能,从而使功耗降低5倍以上。频率低至10mhz时,也可获得类似的功率降低。此外,低v /sub /版本能够运行在188mhz,比标准CMOS快38%。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
"Cool low power" 1 GHz multi-port register file and dynamic latch in 1.8 V, 0.25 /spl mu/m SOI and bulk technology Reliable low-power design in the presence of deep submicron noise Operating-system directed power reduction Model and analysis for combined package and on-chip power grid simulation Minimum power and area n-tier multilevel interconnect architectures using optimal repeater insertion
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1