{"title":"Numerical investigation on the negative characteristic temperature of InGaN blue laser diodes","authors":"H. Ryu","doi":"10.1109/NUSOD.2016.7546998","DOIUrl":null,"url":null,"abstract":"GaN-based blue laser diodes (LDs) can exhibit peculiar temperature characteristics such as quite a high characteristics temperature (T0) or even negative T0. The author investigates the temperature-dependent device characteristics of blue LDs having InGaN double quantum-well (QW) structures using numerical simulations. As the n-type doping concentration of a barrier layer between QWs increases, negative T0 can be observed, which is found to originate from the increase of gain at the n-side QW with temperature as a result of the improvement of hole transport in QWs with temperature.","PeriodicalId":425705,"journal":{"name":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","volume":"3 9 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-07-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 International Conference on Numerical Simulation of Optoelectronic Devices (NUSOD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/NUSOD.2016.7546998","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
GaN-based blue laser diodes (LDs) can exhibit peculiar temperature characteristics such as quite a high characteristics temperature (T0) or even negative T0. The author investigates the temperature-dependent device characteristics of blue LDs having InGaN double quantum-well (QW) structures using numerical simulations. As the n-type doping concentration of a barrier layer between QWs increases, negative T0 can be observed, which is found to originate from the increase of gain at the n-side QW with temperature as a result of the improvement of hole transport in QWs with temperature.
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