F. Akhavan, S. Saini, Y. Hu, E. Kershaw, S. Wilson, M. Krainak, R. Leavitt, P. Heim, M. Dagenais
{"title":"High power external cavity semiconductor laser with wavelength tuning over C, L, and S-bands using single-angled-facet gain chip","authors":"F. Akhavan, S. Saini, Y. Hu, E. Kershaw, S. Wilson, M. Krainak, R. Leavitt, P. Heim, M. Dagenais","doi":"10.1109/CLEO.2002.1034488","DOIUrl":null,"url":null,"abstract":"An InP-based single-angled-facet (SAF) gain chip comprised of a curved ridge waveguide is used to make an external cavity semiconductor laser. Wide wavelength tuning over C, L, and S-bands (155 nm) is demonstrated with an output power of more than 80 mW over the entire tuning range and a peak output power of 130 mW.","PeriodicalId":332139,"journal":{"name":"Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2002-05-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CLEO.2002.1034488","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
An InP-based single-angled-facet (SAF) gain chip comprised of a curved ridge waveguide is used to make an external cavity semiconductor laser. Wide wavelength tuning over C, L, and S-bands (155 nm) is demonstrated with an output power of more than 80 mW over the entire tuning range and a peak output power of 130 mW.
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