T. Suzuki, M. Kobiki, M. Wataze, K. Segawa, M. Irie
{"title":"Plated Source Bridge (PSB) GaAs Power FET with Improved Reliability","authors":"T. Suzuki, M. Kobiki, M. Wataze, K. Segawa, M. Irie","doi":"10.1109/MWSYM.1981.1129811","DOIUrl":null,"url":null,"abstract":"Flip chip type GaAs power FET having a plated source bridge (PSB) structure has been developed. Thermal resistance is improved by 2 /spl deg/ C/W for a device with total gate width of 2400 mu. This improvement results in 2 times increase of the device MTTF. At the channel temperature of 150 /spl deg/ C, MTTF more than 10 /sup 7/ hours is estimated by accelerated operation life tests.","PeriodicalId":120372,"journal":{"name":"1981 IEEE MTT-S International Microwave Symposium Digest","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1981-06-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1981 IEEE MTT-S International Microwave Symposium Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.1981.1129811","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Flip chip type GaAs power FET having a plated source bridge (PSB) structure has been developed. Thermal resistance is improved by 2 /spl deg/ C/W for a device with total gate width of 2400 mu. This improvement results in 2 times increase of the device MTTF. At the channel temperature of 150 /spl deg/ C, MTTF more than 10 /sup 7/ hours is estimated by accelerated operation life tests.
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