V. I. Baljtjba, V. P. Vobonkdv, A. P. Vjatkin, N. I. Lebedeva, D. E. Psoskdhovsky
{"title":"PHYSICAL AND ELECTROPHYSICAL PROPERTIES OF Ge2x(GaAs)1-x LAYERS INDUCED BY PULSE ELECTRON BEAM ANNEALING","authors":"V. I. Baljtjba, V. P. Vobonkdv, A. P. Vjatkin, N. I. Lebedeva, D. E. Psoskdhovsky","doi":"10.1515/9783112575666-034","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":432951,"journal":{"name":"EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-12-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EPM ’89: 3rd International Conference on Energy Pulse and Particle Beam Modification of Materials, September 4.–8. 1989, Dresden, GDR","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1515/9783112575666-034","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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